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?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt npn silicon transistor planar silicon transistor absolute maximum ratings t c =25 c unless otherwise noted * pulse test: pulse width=5ms, duty cycle < 10% thermal characteristics t c =25 c unless otherwise noted * mounted on 1? square pcb (fr4 ro g-10 material) symbol parameter value units v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 5 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c power dissipation(t c =25 c) : d-pak * : to-220 30 50 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c symbol characteristics rating unit to-220 d-pak r jc thermal resistance junction to case 2.5 4.17 * c/w r ja junction to ambient 62.5 50 t l maximum lead temperature for soldering purpose ; 1/8? from case for 5 seconds 270 270 c ksc5402d/ksc5402dt high voltage high speed power switch application ? wide safe operating area ? built-in free wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices; d-pak or to-220 c b e equivalent circuit 1 1.base 2.collector 3.emitter 1 d-pak to-220
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1000 1090 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 450 525 v bv ebo emitter-base breakdown voltage i e =1ma, i c =0 12 14 v i ces collector cut-off current v ces =1000v, i eb =0 t c =25 c 0.03 100 a t c =125 c 1.2 500 i ceo collector cut-off current v ce =450v, v b =0 t c =25 c 0.3 100 a t c =125 c 15 500 i ebo emitter cut-off current v eb =10v, i c =0 0.01 100 a h fe dc current gain v ce =1v, i c =0.4a t c =25 c1429 t c =125 c8 17 v ce =1v, i c =1a t c =25 c6 9 t c =125 c4 6 v ce (sat) collector-emitter saturation voltage i c =0.4, i b =0.04a t c =25 c0.250.6 t c =125 c0.41.0 i c =1a, i b =0.2a t c =25 c 0.3 0.75 v t c =125 c0.651.2v v be (sat) base-emitter saturation voltage i c =0.4a, i b =0.04a t c =25 c0.781.0v t c =125 c0.650.9v i c =1a, i b =0.2a t c =25 c0.851.1v t c =125 c0.751.0v c ib input capacitance v eb =8v, i c =0, f=1mhz 330 500 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 35 100 pf f t current gain bandwidth product i c =0.5a, v ce =10v 11 mhz v f diode forward voltage i f =1a t c =25 c0.861.5v i f =0.2a t c =25 c0.751.2v t c =125 c0.6 v i f =0.4a t c =25 c0.81.3v t c =125 c0.65 v
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min typ. max. units t fr diode froward recvery time (di/dt=10a/ s) i f =0.2a i f =0.4a i f =1a 540 520 480 ns ns ns v ce (dsat) dynamic saturation voltage i c =0.4a, i b1 =40ma v cc =300v @ 1 s7.5v @ 3 s2.5v i c =1a, i b1 =200ma v cc =300 @ 1 s11.5v @ 3 s1.5v resistive load switching (d.c < 10%, pulse width=20 s) t on turn on time i c =1a, i b1 =200ma i b2 =150ma v cc =300v r l = 300 ? t c =25 c 110 150 ns t c =125 c 135 ns t off turn off time t c =25 c 0.95 1.25 s t c =125 c1.4 s inductive load switching (v cc =15v) t stg storage time i c =0.4a, i b1 =40ma i b2 =200ma, vz=300v l c =200h t c =25 c0.560.65 s t c =125 c0.7 s t f fall time t c =25 c 60 175 ns t c =125 c75 ns t c cross-over time t c =25 c 90 175 ns t c =125 c90 ns t stg storage time i c =0.8a, i b1 =160ma i b2 =160ma, vz=300v l c =200h t c =25 c2.75 s t c =125 c3 s t f fall time t c =25 c 110 175 ns t c =125 c 180 ns t c cross-over time t c =25 c 125 350 ns t c =125 c 185 ns t stg storage time i c =1a, i b1 =200ma, i b2 =500ma, v z =300v l c =200 h t c =25 c1.11.2 s t c =125 c1.35 s t f fall time t c =25 c 105 150 ns t c =125 c75 ns t c cross-over time t c =25 c 125 150 ns t c =125 c 100 ns
?2001 fairchild semiconductor corporation ksc5402d/ksc5402dt rev. a2, august 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. base-emitter saturation voltage figure 6. collector-emitter saturation voltage 0123456 0.0 0.5 1.0 1.5 2.0 2.5 3.0 900ma i b = 0 500ma 600ma 700ma 800ma 400ma 200ma 300ma i b = 1a 100ma i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 1 10 100 t j =25 t j =125 v ce = 1v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 1 10 100 t j =25 t j =125 v ce = 6v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 5 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 5 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current
?2001 fairchild semiconductor corporation ksc5402d/ksc5402dt rev. a2, august 2001 typical characteristics (continued) figure 7. base-emitter saturation voltage figure 8. collector output capacitance figure 9. typical collector saturation region figure 10. forward recovery time figure 11. diode forward voltage figure 12. resistive switching time, t on 1e-3 0.01 0.1 1 0.1 1 10 t j =25 t j =125 i c = 10 i b v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 1 10 100 10 100 1000 c ob f=1mhz c ib capacitance [pf] reverse voltage [v] 1e-3 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 t j =25 2.0a 1.5a 0.4a 1.0a i c =0.2a collector voltage [v] i c [a], collector current 0.0 0.5 1.0 450 500 550 t fr [ns], forward recovery time i f [a], forward current 0.01 0.1 1 0.1 1 10 t j =25 t j =125 v fd [v], voltage i fd [a], current 0.4 0.6 0.8 1.0 1.2 1.4 100 200 300 t j =25 t j =125 i c =5i b1 =2i b2 v cc =300v pw=40 s t on [ns], time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5402d/ksc5402dt rev. a2, august 2001 typical characteristics (continued) figure 13. resistive switching time, t off figure 14. inductive switching time, t si figure 15. inductive switching time, t fi figure 16. inductive switching time, t c figure 17. inductive switching time, t si figure 18. inductive switching time, t fi 0.4 0.6 0.8 1.0 1.2 1.4 1.0 1.5 2.0 i c =5i b1 =2i b2 v cc =300v pw=40 s t j =25 t j =125 t off [ s], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 550 600 650 700 750 800 850 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t si [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 50 60 70 80 90 100 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 60 70 80 90 100 110 120 130 t j =25 t j =125 i c =10i b1 =2i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 20 25 30 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t si [ s], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 50 100 150 200 250 300 350 400 450 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5402d/ksc5402dt rev. a2, august 2001 typical characteristics (continued) figure 19. inductive switching time, t c figure 20. inductive switching time, t si figure 21. inductive switching time, t fi figure 22. inductive switching time, t c figure 23. forward bias safe operating area figure 24. power derating 0.4 0.6 0.8 1.0 1.2 1.4 50 100 150 200 250 300 350 400 450 t j =25 t j =125 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 1e-3 0.01 0.1 1 1 10 100 t j =25 t j =125 v ce = 1v h fe , dc current gain i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 40 60 80 100 120 140 160 t j =25 t j =125 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t fi [ns], time i c [a], collector current 0.4 0.6 0.8 1.0 1.2 1.4 60 80 100 120 140 160 180 200 t j =25 t j =125 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200 h t c [ns], time i c [a], collector current 10 100 1000 0.01 0.1 1 10 1 s 10 s 50 s dc 1ms 5ms i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 ksc5402dt ksc5402d p c [w], power dissipation t c [ ], case temperature
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 package demensions ?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt dimensions in millimeters
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5402d/ksc5402dt dimensions in millimeters package demensions (continued) 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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